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Oxide perovskites would provide a convenient precursor for the synthesis of chalcogenide perovskites. However, the stability of oxide perovskites means that there is no driving force for sulfurization or selenization with conventional chalcogen sources. In this work, we show that sulfurization and selenization of highly stable early transition metal oxides are possible by heating in the presence of HfH2 and S or Se, thereby creating HfS3 or HfSe3 as an oxygen sink and producing an oxygen shuttle in the form of H2O/H2S or H2O/H2Se. The conversion of ZrO2 into ZrS3 or ZrSe3 is supported with thermodynamic calculations and demonstrated experimentally as a proof-of-concept. Subsequently, we demonstrate that BaZrO3 can be converted to BaZrS3 at 575 °C, several hundred degrees below previous methods relying on conventional sulfur sources. 

Synthesis of homoleptic zirconium and hafnium dithiocarbamate via carbon disulfide insertion into zirconium and hafnium amides were investigated for their utility as soluble molecular precursors for chalcogenide perovskites and binary metal sulfides. Treating M(NEtR)4 (M= Zr, Hf and R= Me, Et) with CS2 resulted in quantitative yields of homoleptic Group IV dithiocarbamates. Zr(2-S2CNMeEt) (1), Zr(2-S2CNEt2)4 (2), and Hf(2-S2CNEt2)4 (4), a rare example of a crystal of a homoleptic hafnium CS2 inserted amide species, were characterized. A computational analysis confirmed assignments for IR spectroscopy. To exemplify the utility of the Group IV dithiocarbamates, a solution-phase nanoparticle synthesis was performed to obtain ZrS3 via the thermal decomposition of Zr(S2CNMeEt)4. 

The enargite phase of Cu3AsS4 (ENG) is an emerging photovoltaic material with a ∼1.4 eV bandgap and is composed of earth abundant elements with favorable defect properties arising from the differing ionic radii of the constituent elements. Unfortunately, ENG-based photovoltaic devices have experimentally been shown to have low power conversion efficiencies, possibly due to defects in the material. In this joint computational and experimental study, we explore the defect properties of ENG and employ synthesis approaches, such as silver alloying, to reduce the density of harmful defects. We show that shallow copper vacancies (VCu) are expected to be the primary defects in ENG and contribute to its p-type character. However, as shown through photoluminescence (PL) measurements of synthesized ENG, a large mid-bandgap PL peak is present at ∼0.87 eV from a band edge, potentially caused by a copper- or sulfur-related defect. To improve the properties of ENG films and mitigate the mid-bandgap PL, we employed an amine-thiol molecular precursor-based synthesis approach and utilized silver alloying of ENG films. While silver alloying did not affect the mid-bandgap PL peak, it increased grain size and lowered film porosity, improving device performance. In conclusion, we found that incorporating silver such that [Ag]/([Ag] + [Cu]) is 0.05 in the film using an amine-thiol based molecular precursor route with As2S3 as the arsenic source resulted in improved photovoltaic device performance with a champion device of efficiency 0.60%, the highest reported efficiency for an Cu3AsS4 (ENG)-based device to date.